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Terms for subject Electronics containing 掺杂 | all forms | in specified order only
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中掺杂medium-doping
中子掺杂硅neutron-doped silicon
中子女嬗变掺杂直拉单晶硅neutron transmutation doped Czochralski-grown silicon
中子嬗变掺杂工艺neutron transmutation doping process
中子嬗变掺杂悬浮区熔硅neutron transmutation doped float zone silicon
中子轰击均匀掺杂硅neutron bombarded homogeneously doped silicon
中浓度掺杂medium-doping
互补调制掺杂场效应晶体管complementary modulation-doped field-effect transistor
低掺杂浓度发射区晶体管low emitter concentration transistor
低掺杂浓度发射区晶体管light emitter concentration
低掺杂浓度源/漏lowly doped source/drain
低浓度掺杂low-doping
低温掺杂low temperature doping
低温未掺杂氧化物low-temperature undoped oxide
体掺杂材料bulk doped material
倒 T 形栅轻掺杂漏场效应晶体管inverse-T gate lightly doped drain field-effect transistor
倒T形栅全交叠覆盖轻掺杂漏inverse-T gate fully overlapped lightly doped drain
倒T形栅轻掺杂漏inverse-T gate lightly doped drain
倒置调制掺杂场效应晶体管inverted modulation-doped field-effect transistor
倾斜注人全交叠覆盖轻掺杂漏angled implant fully overlapped lightly doped drain
全交叠覆盖轻掺杂漏fully overlapped lightly doped drain
全交叠多晶硅衬垫轻掺杂漏total overlap with polysilicon spacer lightly doped drain
全部栅交叠覆盖轻掺杂漏结构fully gate-overlapped lightly doped drain structure
分子层掺杂molecular layer doping
分裂栅调制掺杂场效应晶体管split-gate modulation-doped field-effect transistor
利用四乙氧基硅烷硅先质的化学性质淀识硼、磷掺杂氧化物boron and phosphorus doped oxide deposited using TEOS silicon precursor chemistry
原子层掺杂atomic layer doping
双掺杂晶体double-doped crystal
双掺杂漏侧璧晶体管side-wall transistor with double doped drain
双掺杂漏区double doped drain
双掺杂激光器double-doped laser
双侧平面掺杂的double-side planar-doped
双异质结构调制掺杂场效应晶体管double-heterostructure modulation-doped field-effect transistor
双栅调制掺杂场效应晶体管dual gate modulation-doped field-effect transistor
双轻掺杂漏凹面结构double LDD concave structure
双重注人轻掺杂漏double implanted lightly doped drain
受主掺杂donor doping
四氮化三硅-二氧化硅轻掺杂漏衬垫结构Si3N4 on SiO2 lightly doped drain spacer structure
四氮化三硅轻掺杂漏衬垫结构silicon nitride lightly doped drain spacer structure
均匀掺杂/平面掺杂高电子迁移率晶体管uniformly doped/planar-doped high electron mobility transistor
均匀掺杂的uniformly doped
均匀掺杂集电区双极结型晶体管uniformly-doped-collector BJT
P 型掺杂剂轻掺杂漏注人p-type dopant lightly doped drain implant
N 型掺杂剂轻掺杂漏注人n-type dopant lightly doped drain implant
增强肖特基调制掺杂场效应晶体管enhanced Schottky modulation-doped field-effect transistor
多重平面掺杂multiple planar doping
嬗变掺杂硅transmutation doping silicon
局部掺杂沟道partially doped channel
平面掺杂剂源planar dopant source
平面掺杂势垒结构planar doped barrier structure
平面掺杂势垒二极管planar doped barrier diode
平面掺杂势垒二极管planar-doped barrier diode
平面掺杂势垒晶体管planar doped barrier transistor
平面掺杂基区异质结双极晶体管planar doped base heterojunction bipolar transistor
平面掺杂沟道planar-doped channel
平面掺杂的planar-doped
平面掺杂高电子迁移率晶体管planar-doped high electron mobility transistor
快速热掺杂rapid thermal doping
快速直接汽相掺杂rapid vapor-phase direct doping
意外掺杂层non-intentionally doped layer
扩散全交叠覆盖轻掺杂漏区diffused fully overlapped lightly doped drain
投影式气体浸没激光掺杂一种超浅结准分子激光掺杂技术projection gas immersion laser doping
择优掺杂技术preferential doping technique
掩埋P型层轻掺杂漏buried p-layer lightly doped drain
掩埋P型缓冲层轻掺杂漏buried p-type buffer lightly doped drain (region)
掺混杂物adulterant
δ 掺杂将掺杂剂原子约束在二维平面一个原子层厚度之内的掺杂delta-doping
半导体中掺杂doping
掺杂剂-价电子交换对dopant-valence alternation pair
掺杂半导体玻璃semiconductor-doped glass
掺杂多晶硅doped polysilicon
掺杂多晶硅配平doped polysilicon trimming
δ 掺杂层delta-doped layer
δ 掺杂层场效应晶体管delta-doped layer field-effect transistor
δ 掺杂层金属氧化物半导体场效应晶体管delta-doped layer metal-oxide-semiconductor field-effect transistor
δ掺杂沟道场效应晶体管delta-doped channel field-effect transistor
掺杂沟道异质结场效应晶体管doped-channel heterojunction field-effect transistor
掺杂沟道异质结构场效应晶体管doped-channel heterostructure field-effect transistor
掺杂沟道异质结构绝缘栅场效应晶体管doped-channel heterostructure insulated gate field-effect transistor
掺杂沟道异质结金属-绝缘体-半导体场效应晶体管doped-channel hetero MISFET
掺杂沟道类金属-绝缘体-半导体场效应晶体管doped-channel MIS-like FET
掺杂淀积二氧化硅工艺doped deposited silica process
掺杂物foreign matter
掺杂物foreign material
掺杂的过程adulteration
掺杂质补偿doping compensation
δ 掺杂诱生双势垒量子阱二极管delta-doping-induced double-barrier quantum-well diode
掺杂超晶络doping superlattice
掺杂锗探测器impurity-doped germanium detector
δ 掺杂高电子迁移率晶体管delta-doped high electron mobility transistor
斜面结轻掺杂漏结构sloped-junction lightly doped drain structure
旋涂掺杂剂源spin-on dopant source
晕圈源全交叠覆盖轻掺杂漏halo source-fully overlapped lightly doped drain
晕圈源栅交叠覆盖轻掺杂漏halo source-gate overlapped lightly doped drain
有重掺杂基区阱的双叉指层two interdigitation levels with heavily-doped base well
未掺杂氢化非晶硅intrinsic hydrogenated amorphous silicon
未掺杂的undoped
未掺杂非晶硅intrinsic amorphous silicon
晶格间杂质掺入incorporation of foreign matter
栅交叠覆盖轻掺杂漏器件gate-overlapped lightly doped drain device
栅交叠双氧化层轻掺杂漏gate overlap on twin oxide lightly doped drain
栅漏交叠覆盖轻掺杂漏gate-drain overlapped LDD
栅漏交叠覆盖轻掺杂漏gate-drain overlapped lightly doped drain
横向掺杂隐埋层结构laterally doped buried layer structure
次级二次离子注人掺杂doping by secondary implantation
气体浸没激光掺杂gas immersion laser doping
气相掺杂技gas doping technique
气相掺杂法gas-phase doping method
氧化物轻掺杂漏衬垫结构oxide lightly doped drain spacer structure
氧化锌掺杂磷化镓zinc oxide-doped gallium phosphide
氮掺杂砷化镓nitrogen-doped gallium arsenide
氮掺杂磷化镓nitrogen-doped gallium phosphide
汞掺杂锗检探测器mercury doped germanium detector
P 沟道调制掺杂异质结构场效应晶体管p-channel modulation-doped heterostructure field-effect transistor
N 沟道调制掺杂异质结构场效应晶体管n-channel modulation-doped heterostructure field-effect transistor
沟道边缘掺杂法channel edge doping method
浸气式激光掺杂gas immersion laser doping
激光引发预淀积杂质熔化掺杂技术laser-induced melting of predeposited impurity doping technique
热解氮化硼坩埚内生长非掺杂衬底半绝缘 GaAs 生长undoped substrate grown in pyrolytic boron-nitride crucible
石英坩埚内生长非掺杂衬底半绝缘GaAs 生长undoped substrate grown in quartz crucible
砷平面掺杂剂源arsenic planar dopant source
砷快速热掺杂arsenic rapid thermal doping
硅掺杂silicon-doped
硅掺杂doping of silicon
磷旋涂掺杂剂源phosphorus spin-on dopand source
离子注人掺杂ion implantation doping
离子注人掺杂多晶硅ion-implanted doped polysilicon
离子注人掺杂技术ion implantation doping technique
稀土元素掺杂光纤rare earth doped fiber
穿过金属膜注人掺杂剂implanting the dopant through the metal film
等离子体掺杂技术又称 PIIIplasma doping technology
脉冲成形掺杂pulse~shaped doping
脉冲成形掺杂结构pulse-shaped doped structure
表面 P 型掺杂技术surface p-type doping technique
表面 P 型层掺杂技术surface p-layer doping technique
表面计数器掺杂轻掺杂漏结构surface counter doped lightly doped drain structure
覆硅化物轻掺杂漏结构silicide on lightly doped drain structure
调制掺杂modulation doping
调制掺杂场效应晶体管亦称 HEMT, TEGFET 或 SDHTmodulation-doped field-effect transistor
调制掺杂异质结modulation-doped heterojunction
调制掺杂异质结modulation doped heterojunction
调制掺杂异质结场效应晶体管modulation-doped heterojunction field-effect transistor
调制掺杂异质结构modulation doped heterostructure
调制掺杂电荷耦合器件modulation-doped charge-coupled device
调制掺杂的modulation doped
调制掺杂量子阱结构modulation-doped quantum well structure
贋配调制掺杂场效应晶体管pseudomorphic modulation-doped field-effect transistor
超晶格选择掺杂异质结构晶体管superlattice selectively doped heterostructure transistor
轻掺杂low-doping
轻掺杂共漏区结构lightly doped common drain structure
轻掺杂发射区lightly doped emitter (region)
轻掺杂深漏区结构lightly doped deep drain structure
轻掺杂源区lightly doped source region
轻掺杂源/漏lowly doped source/drain
轻掺杂漏区lightly doped drain region
轻掺杂漏场效应晶体管lightly doped drain field-effect transistor
轻掺杂漏N沟道金属氧化物半导体场效应晶体管lightly doped drain n-channel metal-oxide-semiconductor field-effect transistor
轻掺杂漏补偿多晶硅薄膜晶体管lightly-doped drain-offset polysilicon thin-film transistor
轻掺杂补偿结构lightly-doped offset structure
轻掺杂集电区lightly doped collector
轻掺杂非本征基区lightly doped extrinsic base region
轻微栅交叠覆盖轻掺杂漏结构slightly gate-overlapped lightly doped drain structure
适度掺杂漏极moderately doped drain
适度掺杂轻掺杂漏moderately doped lightly doped drain
适度掺杂轻掺杂漏moderate lightly eloped drain
选择掺杂的selectively doped
选择掺杂单异质结结构selectively doped single-heterojunction structure
选择掺杂双异质结结构selectively doped double-heterojunction structure
选择掺杂双异质结场效应晶体管selectively doped double heterojunction field-effect transistor
选择掺杂异质结晶体管selectively doped heterojunction transistor
选择掺杂异质结构selectively doped heterostructure
选择掺杂异质结构场效应晶体管selectively doped heterostructure field-effect transistor
选择掺杂异质结构晶体管selectively doped heterostructure transistor
选择性表面掺杂selective surface doping
逐步掺杂源-漏延伸gradually doped source-drain extension
重掺杂high-doping
重掺杂效应heavy doping effect
重掺杂源/漏highly doped source/drain
重掺杂漏极heavily doped drain
重掺杂漏-辅助阴极横向绝缘栅双极晶体管heavily doped drain-auxiliary cathode lateral insulated-gate bipolar transistor
量子阱掺杂场效应晶体管quantum-well-doped field-effect transistor
量子阱 δ 掺杂沟道场效应晶体管quantum-well delta-doped channel field-effect transistor
量子阱掺杂沟道异质结构场效应晶体管quantum-well doped channel heterostructure field-effect transistor
金属氧化物半导体器件沟道反逆掺杂counterdoping of MOS channel
金属-绝缘体-掺杂半导体场效应晶体管metal-insulator-doped semiconductor field-effect transistor
金属-绝缘体-掺杂沟道场效应晶体管metal-insulator-doped channel field-effect transistor
金属镀膜轻掺杂漏metal coated lightly doped drain
锌掺杂光电探测器zinc impurity photodetector
锌掺杂砷化镓zinc-doped gallium arsenide
锯齿形掺杂超晶格结构sawtooth doping superlattice structure
隐埋沟道轻掺杂漏buried-channel lightly doped drain
隐埋沟道轻掺杂漏P沟道金属氧化物半导体器件buried-channel lightly doped drain p-channel metal-oxide-semiconductor device
隐埋轻掺杂漏buried lightly doped drain
非掺杂二氧化硅玻璃膜undoped silicon dioxide glass film
非掺杂氧化物un-doped oxide
非掺杂的undoped
非掺杂石英玻璃non-doped silica glass
非掺杂硅酸盐玻璃undoped silicate glass
非掺杂硅酸盐玻璃non-doped silicate glass
非均匀掺杂沟道nonuniformly doped channel
非均匀掺杂结型场效应晶体管nonuniformly doped junction field-effect transistor
非均匀横向掺杂结构variation of lateral doping structure
非轻掺杂漏non-lightly doped drain
非预期掺杂层non-intentionally doped layer
非预期掺杂的unintentionally doped
预放电掺杂法predischarge doping method
高浓度掺杂high-doping
高绝缘介电轻掺杂漏衬垫材料high dielectric lightly doped drain spacer material
高绝缘介电轻掺杂漏衬垫金属氧化物半导体场效应晶体管high dielectric lightly eloped drain spacer MOSFET

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