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Terms for subject Semiconductors containing Junction | all forms | exact matches only
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a junction transistor having an n-type base between a p-type emitter and a p-type collectorp-n-p 型晶体管
a p-n-p junction transistor having a transition of floating layer between p and n regions, to which no ohmic connection is madep-n-p-n 型晶体管
a surface in a P-n junction at which the donor and acceptor concentrations are equalp-n 间界
abrupt junction突变结
alloyed junction合金结
bipolar junction transistor双极晶体管
bipolar junction transistor双极结型晶体管
collector junction集电结
diffused junction扩散结
double-junction CCD双结电荷耦合器件
emitter junction发射结
grown junction生长结
intrinsic-junction transistor in which the intrinsic region is sandwiched between the n-type base and the p-type collectorp-n-i-p 型晶体管
intrinsic-junction transistor in which the intrinsic region is sandwiched between the p-type base and n-type collector layersn-p-i-n 型晶体管
junction between n-type material and intrinsic materialn-i 结
junction field-effect transistor结型场效应晶体管
junction-gate field-effect transistor结栅场效应晶体管
junction transistor having a p-type base between an n-type emitter and an n-type collectorn-p-n 型晶体管
n-p-n junction transistor having a transition or floating layer between p and n regions, to which no ohmic connection is maden-p-n-p 型晶体管
PN junctionPN结
progressive junction缓变结
semiconductor junction with electron and hole conductivities on respective sides of the junctionn-p 结
transistor intrinsic-junction transistor in which the intrinsic region is between n regionsp-n-i-n 型晶体管
transistor intrinsic-junction transistor in which the intrinsic region is between p regionsn-p-i-p 型晶体管
virtual equivalent junction temperature等效结温
virtual equivalent junction temperature有效结温